Viet-Hung Homepage

Theses

1. B. Sc. Thesis

     "The influence of Electron-Acoustic Phonon Scattering on the Absorption Coefficient of a Weak Electromagnetic Wave by Free Electrons in Quantum Wells"

     "Electronic transport and spin polarization effects in graphene nanostructures"

      Institut d'Electronique Fondamentale, Université Paris Sud, Orsay, France, 2010

Refereed papers

A. In international publishings

83. "Electronic localization in small-angle twisted bilayer graphene"

    V. Hung Nguyen, et al.

    submitted (2021)

82. "Localization of lattice dynamics in low-angle twisted bilayer graphene"

    A. C. Gadelha, ..., V. Hung Nguyen, et al.

       

       [on UCLouvain and IMCN news]

81. "Quantum whisperitronics: transducing graphene whispering gallery modes into electronic transport"

    B. Brun, V. Hung Nguyen, N. Moreau, S. Somanchi, et al.

    submitted (2020)

80. "Computational Atomistic Modeling in Carbon Flatland and other 2D Nanomaterials"

    A. Champagne, S. Dechamps, S. M. M. Dubois, A. Lherbier, V. Hung Nguyen, J.-C. Charlier

    Applied Sciences 10, 1724 (2020)

79. "Optimizing Dirac fermions quasi-confinement by potential smoothness engineering"

    B. Brun, N. Moreau, S. Somanchi, V. Hung Nguyen, et al.

    2D Materials 7, 025037 (2020) [citations]

78. "Aharonov-Bohm interferences in polycrystalline graphene"

    V. Hung Nguyen and J.-C. Charlier

    Nanoscale Advances 2, 256-263 (2020) [citations]

77. "Strain Modulated Superlattices in Graphene"

    R. Banerjee, V. Hung Nguyen, et al.,

76. "Stepped Graphene-based Aharonov-Bohm Interferometers"

    V. Hung Nguyen and J.-C. Charlier

    2D Materials 6, 045045 (2019) [citations]

75. "Imaging Dirac fermions flow through a circular Veselago lens"

    B. Brun, N. Moreau, S. Somanchi, V. Hung Nguyen, et al.

    Physical Review B 100, 041401(R) (2019) [citations]

                 [Editors' Suggestion]

74. "Klein tunneling and electron optics in Dirac-Weyl fermion systems with tilted energy dispersion"

    V. Hung Nguyen and J.-C. Charlier

    Physical Review B 97, 235113 (2018) [citations]

73. "Ab initio quantum transport in polycrystalline graphene"

    S. Dechamps, V. Hung Nguyen and J.-C. Charlier

    Nanoscale 10, 7759-7768 (2018) [citations]

72. "Optical Hall effect in strained graphene"

    V. Hung Nguyen, A. Lherbier, and J.-C. Charlier

    2D Materials 4, 025041 (2017) [citations]

71. "Thermoelectric effects in graphene and graphene-based nanostructures using atomistic simulation"

    P. Dollfus, V. Hung Nguyen et al.

    PASMOS2016 Proceedings 1, 38-43 (2016)

70. "Valley filtering and electronic optics using polycrystalline graphene"

    V. Hung Nguyen, S. Dechamps, P. Dollfus, and J.-C. Charlier

    Physical Review Letters 117, 247702 (2016) [citations]

69. Comment on "Orientation dependence of the optical spectra in graphene at high frequencies"

    H. Viet Nguyen and V. Hung Nguyen

    Physical Review B 94, 117401 (2016) [citations]

68. "Transport properties through graphene grain boundaries: strain effects versus lattice symmetry"

    V. Hung Nguyen, Trinh X. Hoang, P. Dollfus, and J.-C. Charlier

    Nanoscale 8, 11658-11673 (2016) [citations]

67. "Transport gap in vertical devices made of incommensurately misoriented graphene layers"

    V. Hung Nguyen and P. Dollfus

    Journal of Physics D: Applied Physics 49, 045306 (2016)

66. "Strong negative differential conductance in strained graphene devices"

    M.Chung Nguyen, V. Hung Nguyen, H. Viet Nguyen, and P. Dollfus

    Journal of Applied Physics 118, 234306 (2015) [citations]

65. "Strain effects on the electronic properties of devices made of twisted graphene layers"

    V. Hung Nguyen, J. Saint-Martin, P. Dollfus, and H. Viet Nguyen

    IWCE2015 Proceedings 1, 1-3 (2015)

64. "High thermoelectric figure of merit in devices made of vertically stacked graphene layers"

    V. Hung Nguyen, J. Saint-Martin, P. Dollfus, M. Chung Nguyen, and H. Viet Nguyen

    SISPAD2015 Proceedings 1, 169-172 (2015)

63. "Strong negative differential resistance in graphene devices with local strain"

    M. Chung Nguyen, V. Hung Nguyen, J. Saint-Martin, P. Dollfus, and H. Viet Nguyen

    IWCE2015 Proceedings 1, 1-3 (2015)

62. "Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer"

    V. Hung Nguyen and P. Dollfus

    2D Materials 2, 035005 (2015) [citations]

61. "Enhanced Seebeck effect in graphene devices by strain and doping engineering"

    M. Chung Nguyen, V. Hung Nguyen, H. Viet Nguyen, J. Saint-Martin, and P. Dollfus

    Physica E 73 (2015) 207-212 [citations]

60. Topical Review: "Thermoelectric effects in graphene nanostructures"

    P. Dollfus, V. Hung Nguyen, and J. Saint-Martin

    Journal of Physics: Condensed Matter 27, 133204 (2015) [citations]

59. "Strain-induced conduction gap in vertical devices made of misoriented graphene layers"

    V. Hung Nguyen, H. Viet Nguyen, J. Saint-Martin, and P. Dollfus

    Nanotechnology 26, 115201 (2015) [citations]

58. "Remote surface roughness scattering in FDSOI devices with high-k/SiO2 gate stacks"

    Y. M. Niquet, I. Duchemin, V. Hung Nguyen, F. Triozon, and D. Rideau

    Applied Physics Letters 106, 023508 (2015) [citations]

57. "Edge-states at the onset of a silicon trigate nanowire FET"

    B. Voisin, V. Hung Nguyen, et al.

    SNW Proceedings 1, 1-2 (2014)

56. "Enhanced thermoelectric figure of merit in vertical graphene junctions"

    V. Hung Nguyen, M. Chung Nguyen, H. Viet Nguyen, J. Saint-Martin, and P. Dollfus

    Applied Physics Letters 105, 133105 (2014) [citations]

55. "Conduction gap in graphene strain junctions: direction dependence"

    M. Chung Nguyen, V. Hung Nguyen, H. Viet Nguyen, and P. Dollfus

    Semiconductor Science and Technology 29, 115024 (2014) [citations]

54. "Quantum modeling of the carrier mobility in FDSOI devices"

    V. Hung Nguyen, Y. M. Niquet, F. Triozon, I. Duchemin, O. Nier, and D. Rideau

    IEEE Transactions on Electron Devices 61 (2014) 3096-3102 [citations]

53. "Modeling of FDSOI and trigate devices: What can we learn from Non-Equilibrium Green's Functions?"

     Y. M. Niquet, V. Hung Nguyen, F. Triozon, I. Duchemin, J. Li, O. Nier, and D. Rideau

     IWCE2014 Proceedings 1, 1-2 (2014)

50. "The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings"

    V. Hung Nguyen, Y. M. Niquet, and P. Dollfus

    Journal of Physics: Condensed Matter 26, 205301 (2014)

    Q. Wilmart, S. Berada, D. Torrin, V. Hung Nguyen, et al. 

    2D Materials 1, 011006 (2014) [citations]

48. "Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor"

    B. Voisin, V. Hung Nguyen, et al.

    Nano Letters 14 (2014) 2094-2098 [citations]

47. "Improved performance of graphene transistors by strain engineering"

    V. Hung Nguyen, H. Viet Nguyen, and P. Dollfus

    Nanotechnology 25, 165201 (2014) [citations]

46. "On the non-linear effects in graphene devices"

    V. Hung Nguyen, A. Alarcón, S. Berrada, et al.

    Journal of Physics D: Applied Physics 47, 094007 (2014)

45. "Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule and comparison with semi-classical approaches"

    Y. M. Niquet, V. Hung Nguyen, F. Triozon, I. Duchemin, O. Nier, and D. Rideau

    Journal of Applied Physics 115, 054512 (2014) [citations]

44. "Mobility in High-K Metal Gate UTBB-FDSOI Devices: from NEGF to TCAD perspectives"

    D. Rideau, Y. M. Niquet, O. Nier, A. Cros, P. Palestri, D. Esseni, V. Hung Nguyen, et al.

    IEDM2013 Proceedings 1, 12.5.1-12.5.4 (2013)

43. "Multi-scale strategy for high-k metal gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility"

     O. Nier, D. Rideau, Y. M. Niquet, F. Monsieur, V. Hung Nguyen, et al.

    Journal of Computational Electronics 12 (2013) 675-684

42. "Graphene nanomesh transistor with high on/off ratio and good saturation behavior"

     S. Berrada, V. Hung Nguyen, et al.

    Applied Physics Letters 103, 183509 (2013) [citations]

41. "Scaling of Omega-gate SOI nanowire n- and p-FET down to 10nm gate length: Size- and orientation-dependent strain effects"

    S. Barraud, ..., V. Hung Nguyen, et al.

    VLSIT2013 Proceedings 1, T230 - T231 (2013)

40. "Strain effects on transport properties of Si nanowire devices"

    V. Hung Nguyen, F. Triozon, and Y.-M. Niquet

    SISPAD2013 Proceedings 1, 89-92 (2013)

39. "Density Gradient calibration for 2D quantum confinement : Tri-Gate SOI transistor application"

    N. Pons, ..., V. Hung Nguyen, et al.

    SISPAD2013 Proceedings 1, 184-187 (2013)

38. "Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings"

    V. Hung Nguyen, Y. M. Niquet, and P. Dollfus

    Physical Review B 88, 035408 (2013) [citations]

37. "Performances of strained nanowire devices: ballistic versus scattering-limited currents"

    V. Hung Nguyen, F. Triozon, F. Bonnet, and Y. M. Niquet

    IEEE Transactions on Electron Devices 60 (2013) 1506-1513 [citations]

36. "Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance"

     V. Hung Nguyen, J. Saint-Martin, et al.

    Journal of Computational Electronics 12 (2013) 85-93

35. "Pseudosaturation and negative differential conductance in graphene field-effect transistors"

     A. Alarcón, V. Hung Nguyen, et al.

    IEEE Transactions on Electron Devices 60 (2013) 985-991 [citations]

34. "Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures"

    V. Hung Nguyen, M. Chung Nguyen, H. Viet Nguyen, and P. Dollfus

    Journal of Applied Physics 113, 013702 (2013) [citations]

33. "Transport properties of strained silicon nanowires"

     Y. M. Niquet, C. Delerue, V. Hung Nguyen, C. Krzeminski, and F. Triozon

    ESSDERC2012 Proceedings 1, 290-293 (2012)

32. "Gate-controllable negative differential conductance in graphene tunneling transistors"

    V. Hung Nguyen, Y. M. Niquet, and P. Dollfus

    Semiconductor Science and Technology 27, 105018 (2012) [citations]

31. "Resonant tunneling diodes based on graphene/h-BN heterostructure"

    V. Hung Nguyen, F. Mazzamuto, A. Bournel, and P. Dollfus

    Journal of Physics D: Applied Physics 45, 325104 (2012) [citations]

30. "Transport behaviors in graphene field-effect-transistors on boron nitride substrate"

     A. Alarcón, V. Hung Nguyen, et al.

     IWCE2012 Proceedings 1, 1-4 (2012)

29. "Thermoelectric performance of defected and nanostructured graphene ribbons using Green's function method"

    F. Mazzamuto, J. Saint-Martin, V. Hung Nguyen, C. Chassat, and P. Dollfus

    Journal of Computational Electronics 11 (2012) 67-77

28. "Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect"

    V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, A. Bournel, and P. Dollfus

    Nanotechnology 23, 065201 (2012) [citations]

    [Highlights in NANOTECHWEB, Feb. 2012]

27. "Resonant tunneling structures based on epitaxial graphene on SiC"

    V. Hung Nguyen, A. Bournel, and P. Dollfus

    Semiconductor Science and Technology 26, 125012 (2011) [citations]

    [selected in the IOPSELECT Collection, Nov. 2011]

26. "Nanostructuration of graphene nanoribbons for thermoelectric applications"

    F. Mazzamuto, J. Saint-Martin, V. Hung Nguyen, Y. Apertet, C. Chassat, and P. Dollfus

    SISPAD2011 Proceedings 1, 223 -226 (2011)

25. "Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions"

    V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, A. Bournel, and P. Dollfus

    Applied Physics Letters 99, 042105 (2011) [citations]

    [Vir. J. Nan. Sci. & Tech. 24, Aug. 8 (2011)]

24. "Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons"

23. "Large peak-to-valley ratio of negative differential conductance in graphene p-n junctions"

    V. Hung Nguyen, A. Bournel, and P. Dollfus

    Journal of Applied Physics 109, 093706 (2011) [citations]

    [Vir. J. Nan. Sci. & Tech. 23, May 23 (2011)]

22. "Spin-polarized current and tunneling magneto-resistance in ferromagnetic gate bilayer graphene structures"

    V. Hung Nguyen, A. Bournel, and P. Dollfus

    Journal of Applied Physics 109, 073717 (2011) [citations]

    F. Mazzamuto, V. Hung Nguyen, et al.

    IWCE2010 Proceedings 1, 1-4 (2010)

20. "Quantum transport of Dirac fermions in graphene nanostructures"

    P. Dollfus, V. Hung Nguyen, V. Nam Do, and A. Bournel

    IWCE2010 Proceedings 1, 1-6 (2010) [invited]

19. "Quantum transport of Dirac fermions in graphene field effect transistors"

    V. Hung Nguyen, A. Bournel, C. Chassat, and P. Dollfus

    SISPAD2010 Proceedings 1, 9-12 (2010)

18. "The conduction gap in double gate bilayer graphene structures"

    V. Hung Nguyen, A. Bournel and P. Dollfus

    Journal of Physics: Condensed Matter 22, 115304 (2010) [citations]

    [selected in the Journal's Highlights of 2010]

17. "Resonant tunneling and negative transconductance in single barrier bilayer graphene structure"

    V. Hung Nguyen, A. Bournel, V. Lien Nguyen and P. Dollfus

    Applied Physics Letters 95, 232115 (2009) [citations]

    [Vir. J. Nan. Sci. & Tech. 21, Jan. 4 (2010)]

16. "Spin-dependent transport in armchair graphene nanoribbon structures with edge roughness effects"

    V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen and P. Dollfus

    Journal of Physics: Conference Series 193, 012100 (2009) [citations]

    [EDISON16-2009, Montpellier - France]

15. "Controllable spin dependent transport in armchair graphene nanoribbon structures"

    V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen and P. Dollfus

    Journal of Applied Physics 106, 053710 (2009) [citations]

    [Vir. J. Nan. Sci. & Tech. 20, Sept. 21 (2009)]

14. "Spin-dependent transport in double ferromagnetic-gate graphene structures"

    V. Hung Nguyen, A. Bournel, P. Dollfus and V. Lien Nguyen

    Journal of Physics: Conference Series 187, 012037 (2009) [citations]

    [AMSN-2008, Nha Trang - Vietnam]

13. "Electronic transport and spin-polarization effects of relativistic-like particles in mesoscopic graphene structures"

    V. Nam Do, V. Hung Nguyen, P. Dollfus and A. Bournel

    Journal of Applied Physics 104, 063708 (2008) [citations]

    [Vir. J. Nan. Sci. & Tech. 18, Oct. 6 (2008)]

12. "Phonon-assisted tunneling and shot noise in double barrier structures in a longitudinal magnetic field"

    T. Anh Pham, V. Hung Nguyen and V. Lien Nguyen

    Physics Letters A 372 (2008) 4947-4952

11. "Current and shot noise in double barrier resonant tunneling structures in a longitudinal magnetic field"

    V. Hung Nguyen, V. Lien Nguyen and T. Anh Pham

    Physical Review B 76, 235326 (2007) [citations]

10. "Coulomb-blockade, current and shot noise in parallel double metallic quantum dot structures"

    V. Hung Nguyen and V. Lien Nguyen

    Journal of Physics: Condensed Matter 19, 26220 (2007) [citations]

9. "Super-Poissonian noise in a Coulomb blockade metallic quantum dot structure"

    V. Hung Nguyen and V. Lien Nguyen

    Physical Review B 73, 165327 (2006) [citations]

    [Vir. J. Nan. Sci. & Tech. 13, May 8 (2006)] 

8. "Cotunneling versus sequential tunneling in Coulomb blockade metallic double quantum dot structures"

    V. Duc Nguyen, V. Hung Nguyen and V. Lien Nguyen

    Journal of Physics: Condensed Matter 18, 2729 (2006) 

7. "Shot noise in metallic double dot structures with a negative differential conductance"

    V. Hung Nguyen, V. Lien Nguyen and P. Dollfus

    Applied Physics Letters 87, 123107 (2005) [citations]

    [Vir. J. Nan. Sci. & Tech. 12, Sept. 26 (2005)]

6. "Negative differential conductance in metallic double quantum dot structures"

    V. Hung Nguyen, V. Lien Nguyen and H. Nam Nguyen

    Journal of Physics: Condensed Matter 17, 1157 (2005) [citations]

5. "Coulomb blockade and negative differential conductance in metallic double-dot devices"

    V. Hung Nguyen, V. Lien Nguyen and H. Nam Nguyen

    Journal of Applied Physics 96, 3302 (2004) [citations]

     [Vir. J. Nan. Sci. & Tech. 10, Sept. 13 (2004)]

B. In national publishings and others

4. "Electron spin evolution induced by hyperfine interaction with nuclear spins in a 2D?quantum dot"

    V. Truong Dai and V. Hung Nguyen

    Communications in Physics 17, 221 (2007)

    [Vietnamese Journal of Physics]

3. "Sequential tunneling and Shot noise in Ferromagnet /Normal-Metal/Ferromagnet double tunnel junctions"

    H. Giang Bach, V. Hung Nguyen and T. Anh Pham

    ArXiv:cond-mat/0701123

2. "Current and shot noise in 1D-arrays of quantum dots"

    H. Nam Nguyen, T. Anh Pham and V. Hung Nguyen

    Communications in Physics 16, 193 (2006)

    [Vietnamese Journal of Physics]

1. "Statistics of Coulomb-blockade peak spacing in disordered quantum dots"

    V. Hung Nguyen and V. Duc Nguyen

    Communications in Physics, Supplement 40 (2004)

    [Vietnamese Journal of Physics]

47. "Strategies to control the current in graphene transistors"

      P. Dollfus, V. Hung Nguyen, S. Berrada, V. Truong Tran, M. Chung Nguyen, A. Bournel, J. Saint-Martin

      CMOS Emerging Technologies Research Symposium, Grenoble (06-08 July 2014), France

46. "Strategies to improve the control of current in graphene transistors"

      P. Dollfus,V. Hung Nguyen, S. Berrada, V. Truong Tran, M. Chung Nguyen, A. Bournel, J. Saint-Martin

     18th European Conference on Mathematics for Industry, Taormina (09-13 June 2014), Italy

45. "Strain-induced improvement of graphene transistors"

      V. Hung Nguyen, M. Chung Nguyen, H. Viet Nguyen, and P. Dollfus

      17th International Workshop on Computational Electronics, Paris (03-06 June 2014), France

44. "Klein tunneling transistor with ballistic graphene"

      Q. Wilmart, S. Berrada, V. Hung Nguyen, G. Fève, J.-M. Berroir, P. Dollfus, and B. Plaçais

     Graphene 2014, Toulouse (06-09 May 2014), France

43. "Strategy of strain engineering to improve performance of graphene transistors"

      V. Hung Nguyen, M. Chung Nguyen, H. Viet Nguyen, and P. Dollfus

     Graphene 2014, Toulouse (06-09 May 2014), France

42. "Magneto-transport and Aharonov-Bohm effect in graphene nanoribbon rings"

      V. Hung Nguyen, Y. Michel Niquet, and P. Dollfus

     Graphene 2014, Toulouse (06-09 May 2014), France

41. "Thermoelectric effects in graphene nanoribbons"

      F. Mazzamuto, V. Hung Nguyen, J. Saint-Martin, and P. Dollfus

     CECAM workshop on "Modeling the Physical Properties of Clustering Crystal", Lausanne (04-06 November 2013), Switzerland.

40. "Carbon-based devices: a modelling viewpoint"

      P. Dollfus, V. Hung Nguyen, J. Saint-Martin, D. Querlioz, A. Bournel, and S. Retailleau

     International Semiconductor Conference Dresden – Grenoble, Dresden (26-27 September 2013), Germany.

39. "Transport characteristics of strained Si nanowire FETs"

      V. Hung Nguyen, F. Triozon, I. Duchemin, and Y.-M. Niquet

     5th International Conference on One dimensional Nanomaterials, Annecy (23-26 September 2013), France.

38. "Strain effects on transport properties of Silicon nanowires and devices"

      V. Hung Nguyen, Y.-M. Niquet, F. Triozon, and C. Delerue

     1st International Workshop on Theoretical and Computational Physics, Danang (30 July - 02 August 2013), Vietnam.

37. "Aharonov-Bohm effect in graphene nanoribbon rings"

      V. Hung Nguyen, Y.-M. Niquet, and P. Dollfus

     38th National Conference on Theoretical Physics, Danang (29 July - 01 August 2013), Vietnam.

36. "Mobility in FDSOI devices: Monte Carlo and Kubo Greenwood approaches compared to NEGF simulations"

      D. Rideau, Y. M. Niquet, O. Nier, P. Palestri, D. Esseni, V. Hung Nguyen, F. Triozon, I. Duchemin, D. Garetto, L. Smith, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen

     16th International Workshop on Computational Electronics, Nara (04-07 June 2013), Japan

35. "Graphene nanomesh transistors with high on/off ratio and good current saturation"

      S. Berrada, V. Hung Nguyen, A. Alfonso, D. Querlioz, J. Saint-Martin, A. Bournel, C. Chassat and P. Dollfus

     16th International Workshop on Computational Electronics, Nara (04-07 June 2013), Japan

34. "Effects of strain on transport characteristics of Si nanowire FETs"

      V. Hung Nguyen, F. Triozon and Y. M. Niquet

     5th Plenary Workshop: GdR Nanofils Semiconducteurs, Saint-Martin-de-Londres (02-05 April 2013), France

33. "Transport properties of strained nanowires and devices"

      V. Hung Nguyen, Y. M. Niquet, F. Triozon and C. Delerue

     MRS Spring Meeting & Exhibit, San Francisco/California (01-05 April 2013), USA [invited]

32. "Numerical simulation of graphene nanomesh transistors"

      S. Berrada, V. Hung Nguyen, A. Alfonso, D. Querlioz, J. Saint-Martin, A. Bournel, C. Chassat and P. Dollfus

     Annual meeting of the GDR-I Graphene and Nanotubes, Lorient (08-12 April 2013), France

31. "Graphene nanomesh transistors with high on/off current ratio"

      S. Berrada, V. Hung Nguyen, D. Querlioz, J. Saint-Martin, A. Bournel, C. Chassat and P. Dollfus

     Graphene 2013, Bilbao (23-26 April 2013), Spain

30. "Non linear effects in graphene devices"

      A. Bournel, V. Hung Nguyen, A. Alarcon, S. Berrada, V. Nam Do, J. Saint-Martin, D. Querlioz and P. Dollfus

     2nd Ukrainian‐French Seminar “Semiconductor‐On‐Insulator materials, devices and circuits: physics, technology and diagnostics”, Kiev (08-11 April 2013), Ukraine [invited]

29. "Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes"

      Y. M Niquet, J. Li, V. Hung Nguyen, F. Triozon, W. Zhang, C. Krzeminski, L. Genovese, D. Rideau, C. Delerue

     6th International Meeting on Molecular Electronics, Grenoble (03-07 December 2012), France [invited]

28. "Transport characteristics of strained Si nanowire FETs"

      V. Hung Nguyen, F. Triozon and Y. M. Niquet

     6th International Meeting on Molecular Electronics, Grenoble (03-07 December 2012), France

27. "Optimization of negative differential conductance graphene PN devices"

      V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, Y. M. Niquet, A. Bournel and P. Dollfus

     1st Workshop on «Graphene in Grenoble», Grenoble (18 October 2012), France

26. "Optimized Thermoelectric Properties of Nanostructured Graphene Ribbons"

      F. Mazzamuto, Y. Apertet, V. Hung Nguyen, J. Saint-Martin and P. Dollfus

     3rd International Symposium on Graphene Devices, Saint Aubin (05-09 November 2012), France

25. "Optimization Of Non Linear Effects In Graphene-Based Electronic Devices"

      A. Bournel, V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, and P. Dollfus

     3rd International Symposium on Graphene Devices, Saint Aubin (05-09 November 2012), France [invited]

24. "Graphene Nanomesh: A New Route Towards High-Performance Graphene Transistors"

      S. Berrada, M. Chung Nguyen, V. Hung Nguyen, H. Viet Nguyen, D. Querlioz, J. Saint-Martin, A. Bournel, C. Chassat and P. Dollfus

     3rd International Symposium on Graphene Devices, Saint Aubin (05-09 November 2012), France

23. "Thermoelectric optimization of nanostructured  graphene ribbons using Green's function method"

      F. Mazzamuto, Y. Apertet, V. Hung Nguyen, J. Saint-Martin, and P. Dollfus

     15th International Workshop on Computational Electronics, Madison (22-25 May 2012), Wisconsin, USA

22. "Transport behaviours of 2D graphene field-effect transistors on boron nitride substrate"

      A. Alarcon, V. Hung Nguyen, J. Saint-Martin, A. Bournel, and P. Dollfus

     13th International Conference on Ultimate Integration on Silicon, Grenoble (06-07 March 2012), France

21. "Effect of negative differential conductance in graphene Esaki diodes: GNR or GNM?"

      V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, A. Bournel, and P. Dollfus

     Graphene 2012, Brussels (10-13 April 2012), Belgium

20. "Chiral tunneling and strong negative differential conductance in graphene nanodevices"

      V. Hung Nguyen, F. Mazzamuto, V. Nam Do, J. Saint-Martin, A. Bournel, and P. Dollfus

     Workshop on Novel Devices and Advanced Modeling Techniques in RF Nanoelectronics, Manchester (09 October 2011), England [invited]

19. "Phonon transport and thermoelectric effects in nanostructured graphene nanoribbons"

      F. Mazzamuto, V. Hung Nguyen, Y. Apertet, J. Saint-Martin, A. Bournel, and P. Dollfus

     2nd workshop on Phonons and Fluctuations, Paris (08-09 September 2011), France

18. "Graphene nanostructures designed for thermoelectric applications"

      F. Mazzamuto, Y. Apertet, V. Hung Nguyen, J. Saint-Martin, and P. Dollfus

     European Heat Transfer Conference, Poitiers (29-31 August 2011), France

17. "Enhancement of thermoelectric properties via resonant electronic transport in graphene nanoribbons"

      F. Mazzamuto, V. Hung Nguyen, J. Saint-Martin, and P. Dollfus

     Graphene 2011, Bilbao (11-14 April 2011), Spain

16. "Charge and spin transport in bilayer graphene nanostructures using non-equilibrium Green's function technique"

      V. Hung Nguyen, A. Bournel, and P. Dollfus

     Graphene 2011, Bilbao (11-14 April 2011), Spain

15. "Spin dependent transport in ferromagnetic gate graphene structures"

      V. Hung Nguyen, V. Nam Do, A. Bournel, and P. Dollfus

     9th Asia Pacific Workshop on Materials Physics, Hanoi (12-15 December 2010), Vietnam

14. "Transport d'électrons et de phonons dans les nanorubans de graphène"

      V. Hung Nguyen et F. Mazzamuto

      Poster au Colloque interne de l'IEF, Orsay (24 Novembre 2009), France

13. "Contrôle du courant polarisé en spin dans les nanorubans de graphène"

      V. Hung Nguyen, V. Nam Do, A. Bournel, V. Lien Nguyen and P. Dollfus

      Réunion Plenière du GDR Physique Quantique Mésoscopique, Aussois Centre Paul Langevin (5-8 Octobre 2009), France

12.  "Étude numérique du transport dans les structures de nano-ruban de graphène armchair" [PDF]

      V. Hung Nguyen

      Journées Nationales du Réseau Doctoral de Microélectronique (JNRDM2009), Lyon (Mai 2009), France

11. "Electronic transport and spin polarization effects in single graphene barrier structures"

      V. Nam Do, V. Hung Nguyen, P. Dollfus and A. Bournel

      9th International Conference on the Science and Application of Nanotube (NT08), Montpellier (29 June 29 - 4 July, 2008), France

10. "Green's function approach to transport of massless carriers in Graphene structures"

      V. Nam Do, V. Hung Nguyen, P. Dollfus and A. Bournel

      Computational Challenges and Tools for Nanotubes Symposium (CCTN08), Montpellier (28 June 2008), France

9. "Phonon-assisted resonant magneto-tunneling and shot noise in double barrier structures"

      V. Hung Nguyen, T. Anh Pham and V. Lien Nguyen

      32th National Conference on Theoretical Physics, Nha Trang, Khanh Hoa (6-9 August 2007), Vietnam

8. "Current and noise in metallic quantum dot structures in Coulomb blockade regime"

      B. Huong Giang, T. Anh Pham, V. Hung Nguyen and V. Lien Nguyen

      31th National Conference on Theoretical Physics, Cua Lo, Nghe An (22-25 August 2006), Viet Nam

7. "Electron spin evolution induced by hyperfine interaction with nuclear spins in a 2D-quantum dot"

      V. Truong Dai and V. Hung Nguyen

      31th National Conference on Theoretical Physics, Cualo, Nghe An (22-25 August 2006), Vietnam

6. "Shot noise in coulomb blockade metallic quantum dot structures: Monte-Carlo simulation versus master equation solution"

      B. Huong Giang, T. Anh Pham, V. Hung Nguyen and V. Lien Nguyen

      International Conference on High Performance Scientific Computing, Hanoi (6-10 March 2006), Vietnam

5. "Shot noise in Coulomb blockade double metallic quantum dot devices"

      V. Lien Nguyen and V. Hung Nguyen

      Innovative Nanoscale Approach to Dynamic Studies of  Materials, Okinawa (9 - 14 January 2006), Japan

4. "Negative differential conductance in metallic double dot devices"

      V. Hung Nguyen and H. Nam Nguyen

      29th National Conference on Theoretical Physics, Ho Chi Minh city (15-18 August 2004), Vietnam

3. "Statistics of Coulomb - blockade peak spacing in disordered quantum dots"

      V. Hung Nguyen and V. Duc Nguyen

      29th National Conference on Theoretical Physics, Ho Chi Minh city (15-18 August 2004), Vietnam

2. "Coulomb-blockade of tunneling through a double quantum dot device"

      H. Nam Nguyen and V. Hung Nguyen

      28th National Conference on Theoretical Physics, Thanh Hoa (11-14 August 2003), Vietnam

      1. "The influence of electron – acoustic phonon scattering on the absorption coefficient of the weak electromagnetic wave by free electrons in quantum wells"

      V. Hung Nguyen, T. T. Huong Nguyen and Q. Bau Nguyen

      27th National Conference on Theoretical Physics, Nghe An (2-6 August 2002), Viet Nam

2. "Quantum simulation of charge transport in graphene nano-structures"

    V. Hung Nguyen

    Institute of Physics, Hanoi (May 18, 2010), Viet Nam

1. "Transport in graphene-based structures"

    V. Hung Nguyen

    Institute of Physics, Hanoi (October 07, 2008), Viet Nam